The company offers 4H and 6H fast growing SiC single crystal rods, SiC wafers, low cost SiC epitaxial wafers and low cost SiC chips. As a representative of the third-generation wide bandgap semiconductor material, silicon carbide (SiC) single crystal material has a large band gap (about 3 times that of Si) and a high thermal conductivity (about 3.3 times that of Si or 10 times that of GaAs). The electron saturation migration rate is high (about 2.5 times that of Si) and the breakdown electric field is high (about 10 times that of Si or 5 times of GaAs).